Perspectives in the past, present and future of deep centres in semiconductors, S.T. Pantelides; chalcogen impurities in silicon, H.G. Grimmeiss and E. Janzen; the lattice vacancy in silicon, G.D. Watkins; oxygen and oxygen associates in gallium phosphide and related semiconductors, P.J. Dean; oxygen in gallium arsenide, M. Skowronski; the two dominant recombination centres in n-type gallium phosphide, A.R. Peaker and B. Hamilton; the mid-gap donor level EL2 in gallium, G.M. Martin and S. Makram-Ebeid; the mid-gap donor level EL2 in gallium arsenide - recent developments, G.A. Baraff; DX centres in III-V alloys, D.V. Lang; DX centres in III-V alloys - recent developments, P.M. Mooney; iron impurity centres in III-V semiconductors, S.G. Bishop; chromium in gallium arsenide, J.W. Allen; chromium in II-VI compounds, J.M. Baranowski; the optoelectronic properties of copper in zinc-cation II-VI compound semiconductors, D.J. Robbins et al; hydrogen in crystalline semiconductors, Chris G. Van de Walle.

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Sokrates T. Pantelides (Author)

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