Table of Contents

Preface
Charts
Physical Constants
Properties of Silicon
1. Basic MOSFET Theory
1.1: Field-Effect Transistors
1.2: MOSFET Definitions
1.3: Rudimentary Analysis
1.4: Current-Voltage Equations
1.5: Universal Transfer Characteristics
1.6: Transconductance
1.7: Inverter Options
2. MOS-Capacitor Phenomena
2.1: Oxide-Silicon Boundary Conditions
2.2: Approximate Field and Potential Profiles
2.3: Accurate Band Diagram
2.4: Barrier-Height Difference
2.5: Interfacial Charge
2.6: Oxide Charge
2.7: Calculating Threshold Voltage
3. MOS-Capacitor Modeling
3.1: Exact-Analytic Surface Modeling
3.2: Comparing MOS and Junction Capacitances
3.3: Small-Signal Equivalent Circuits
3.4: Ideal Voltage-Dependent Capacitance
3.5: Real Voltage-Dependent Capacitance
3.6: Physics of MOS-Capacitance Crossover
3.7: Analysis of MOS-Capacitance Crossover
4. Improved MOSFET Theory
4.1: Channel-Junction Interactions
4.2: Ionic-Charge Model
4.3: Body Effect
4.4: Advanced Long-Channel Models
5. SPICE Models
5.1: Level-2 Parameters
5.2: Level-2 Model
5.3: Small-Signal Applications of Model
5.4: Large-Signal Applications of Model
5.5: Recent MOSFET Models
6. MOSFET-BJT Performance Comparisons
6.1: Simple-Theory Transconductance Comparison
6.2: Subthreshold Transconductance Theory
6.3: Calculating Maximum MOSFET gm/Iout
6.4: Transconductance versus Input Voltage
6.5: Physics of Subthreshold Transconductance
Summary
Appendixes A-G
Tables
References
Problems
Symbol Index
Subject Index

Reviews

"This text could support a first undergraduate course in physical electronics that begins with MOSFETs even before students start electromagnetics. Dielectric constant is demystified with atomic pictorials in an Appendix. Alternatively, students previously introduced to semiconductor physics can appreciate the graduated descent into finer levels of MOSFET modeling and the last chapter, MOSFET-BJT Performance Comparisons."--Arthur Uhlir, Tufts University