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Process and Device Modeling for Integrated Circuit Design
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Table of Contents

Section I. Introduction..- Device modeling.- Semiconductor physics and characterization of bipolar transistors.- Section II Basic technologies and measurements.- Diffusion phenomena in silicon.- Silicon epitaxy and oxidation.- Ion implantation.- Pattern generation for integrated circuit fabrication.- Test structures and diagnostic techniques.- Defect characterization.- Measurement techniques.- Fundamental limits in integrated circuits.- Section III Modeling of bipolar devices.- Review of models for bipolar transistors.- Measurements for bipolar devices.- Bipolar transistor model for IC design.- Modeling of bipolar devices.- High current density effects in the collector of bipolar transistors.- Emitter effects in bipolar transistors.- Bipolar models for statistical IC design.- Survey of I2L modeling.- Section IV Modeling of MOS devices.- Review of physical models for MOS transistors.- Characterization and measurements of MOST devices.- Surface characterization. C-V technique.- Surface characterization. Weak inversion.- Ion implanted MOS transistors.- Ion implanted MOS transistors. Depletion mode devices.- Physical MOS models.- Short channels. Scaled down MOSFET's.- SOS MOSFET's.- A MOST model for CAD with automated parameter determination.- CAD models of MOSFET's.- Section V Process modeling.- Process modeling.- Process modeling.- Process oriented IC design.- Modeling of I2L and process selection.- Simulation of integrated circuits fabrication processes.- Participants.- Lecturers.- Scientific organizing committee.

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