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Silicon-Germanium (SiGe) Nanostructures

New or Used: 58 copies from $340.00
New or Used: 58 copies from $340.00

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Table of Contents

Contributor contact details Preface Part I: Introduction Chapter 1: Structural properties of silicon-germanium (SiGe) nanostructures Abstract: 1.1 Introduction 1.2 Crystal structure 1.3 Lattice parameters 1.4 Phase diagram 1.5 Critical thickness 1.6 Structural characterization by X-ray diffraction 1.7 Future trends 1.8 Acknowledgement Chapter 2: Electronic band structures of silicon-germanium (SiGe) alloys Abstract: 2.1 Band structures 2.2 Strain effects 2.3 Effective mass 2.4 Conclusion Part II: Formation of nanostructures Chapter 3: Understanding crystal growth mechanisms in silicon-germanium (SiGe) nanostructures Abstract: 3.1 Introduction 3.2 Thermodynamics of crystal growth 3.3 Fundamental growth processes 3.4 Kinetics of epitaxial growth 3.5 Heteroepitaxy Chapter 4: Types of silicon-germanium (SiGe) bulk crystal growth methods and their applications Abstract: 4.1 Introduction 4.2 Growth methods 4.3 Application of silicon-germanium (SiGe) bulk crystal to heteroepitaxy 4.4 Conclusion Chapter 5: Silicon-germanium (SiGe) crystal growth using molecular beam epitaxy Abstract: 5.1 Introduction 5.2 Techniques 5.3 Nanostructure formation by molecular bean epitaxy (MBE) 5.4 Future trends Chapter 6: Silicon-germanium (SiGe) crystal growth using chemical vapor deposition Abstract: 6.1 Introduction 6.2 Epitaxial growth techniques - chemical vapor deposition (CVD) (ultra high vacuum CVD (UHVCVD), low pressure CVD (LPCVD), atmospheric pressure CVD (APCVD), plasma enhanced CVD (PECVD)) 6.3 Silicon-germanium (SiGe) heteroepitaxy by chemical vapor deposition (CVD) 6.4 Doping of silicon-germanium (SiGe) 6.5 Conclusion and future trends Chapter 7: Strain engineering of silicon-germanium (SiGe) virtual substrates Abstract: 7.1 Introduction 7.2 Compositionally graded buffer 7.3 Low-temperature buffer 7.4 Ion-implantation buffer 7.5 Other methods and future trends Chapter 8: Formation of silicon-germanium on insulator (SGOI) substrates Abstract: 8.1 Introduction: demand for virtual substrate and (Si)Ge on insulator (SGOI) 8.2 Formation of (Si)Ge on insulator (SGOI) by the Ge condensation method 8.3 Extension toward Ge on insulator 8.4 Conclusion 8.5 Acknowledgment Chapter 9: Miscellaneous methods and materials for silicon-germanium (SiGe) based heterostructures Abstract: 9.1 Introduction 9.2 Oriented growth of silicon-germanium (SiGe)on insulating films for thin film transistors and 3-D stacked devices 9.3 Heteroepitaxial growth of ferromagnetic Heusler alloys for silicon-germanium (SiGe)-based spintronic devices 9.4 Conclusion Chapter 10: Modeling the evolution of germanium islands on silicon(001) thin films Abstract: 10.1 A few considerations on epitaxial growth modeling 10.2 Introduction to Stranski-Krastanow (SK) heteroepitaxy 10.3 Onset of Stranski-Krastanow (SK) heteroepitaxy 10.4 Beyond the Stranski-Krastranow (SK) onset: SiGe intermixing 10.5 Beyond the Stranski-Krastanow (SK) onset: vertical and horizontal ordering for applications 10.6 Future trends: ordering Ge islands on pit-patterned Si(001) Chapter 11: Strain engineering of silicon-germanium (SiGe) micro- and nanostructures Abstract: 11.1 Introduction 11.2 Growth insights 11.3 Island engineering 11.4 Rolled-up nanotechnology 11.5 Potential applications 11.6 Sources of further information and advice 11.7 Acknowledgments Part III: Material properties of SiGe nanostructures Chapter 12: Self-diffusion and dopant diffusion in germanium (Ge) and silicon-germanium (SiGe) alloys Abstract: 12.1 Introduction 12.2 Diffusion mechanism 12.3 Self-diffusion in germanium (Ge) 12.4 Self-diffusion in silicon-germanium (SiGe) alloys 12.5 Silicon-germanium (Si-Ge) interdiffusion 12.6 Dopant diffusion in germanium (Ge) 12.7 Dopant diffusion in silicon-germanium (SiGe) alloys 12.8 Dopant segregation 12.9 Conclusion and future trends Chapter 13: Dislocations and other strain-induced defects in silicon-germanium (SiGe) nanostructures Abstract: 13.1 Introduction and background 13.2 Historical overview 13.3 Application of the Thompson tetrahedron to extended defects in silicon-germanium (SiGe) 13.4 Current topics 13.5 Future trends 13.6 Acknowledgments Chapter 14: Transport properties of silicon/silicon-germanium (Si/SiGe) nanostructures at low temperatures Abstract: 14.1 Introduction 14.2 Model, disorder and transport theory 14.3 Transport in quantum wells 14.4 Transport in heterostructures 14.5 Comparison with experimental results 14.6 Discussion and future trends 14.7 Conclusions 14.8 Acknowledgements Chapter 15: Transport properties of silicon-germanium (SiGe) nanostructures and applications in devices Abstract: 15.1 Introduction 15.2 Basic transport properties of strained silicon-germanium (SiGe) heterostructures 15.3 Strain engineering 15.4 Low-dimensional transport 15.5 Carrier transport in silicon/silicon-germanium (Si/SiGe) devices 15.6 Future trends Chapter 16: Microcavities and quantum cascade laser structures based on silicon-germanium (SiGe) nanostructures Abstract: 16.1 Introduction 16.2 Germanium (Ge) dots microcavity photonic devices 16.3 Silicon-germanium (SiGe) quantum cascade laser (QCL) structures 16.4 Conclusions Chapter 17: Silicide and germanide technology for interconnections in ultra-large-scale integrated (ULSI) applications Abstract: 17.1 Introduction 17.2 Formation of silicide and germanosilicide thin films 17.3 Crystalline properties of silicides 17.4 Electrical properties Part IV: Devices using silicon, germanium and silicon-germanium (Si, Ge and SiGe) alloys Chapter 18: Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies Abstract: 18.1 Introduction 18.2 Epitaxial growth 18.3 Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) 18.4 Silicon-germanium (SiGe) bipolar complementary metal oxide semiconductors (BiCMOS) 18.5 Applications in integrated circuit (IC) and large-scale integration (LSI) 18.6 Conclusion Chapter 19: Silicon-germanium (SiGe)-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies Abstract: 19.1 Introduction 19.2 Silicon-germanium (SiGe) channel metal oxide semiconductor field effect transistors (MOSFETs) 19.3 Conclusion Chapter 20: High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs) Abstract: 20.1 Introduction 20.2 Gate stack formation 20.3 Metal oxide semiconductor field effect transistor (MOSFET) fabrication and electron inversion layer mobility 20.4 Germanium (Ge)/metal Schottky interface and metal source/drain metal oxide semiconductor field effect transistors (MOSFETs) 20.5 Conclusion and future trends 20.6 Acknowledgments Chapter 21: Silicon (Si) and germanium (Ge) in optical devices Abstract: 21.1 Background 21.2 Optical waveguides 21.3 Modulators 21.4 Photodetectors and photovoltaics 21.5 Light sources 21.6 Future trends 21.7 Sources of further information and advice Chapter 22: Spintronics of nanostructured manganese germanium (MnGe) dilute magnetic semiconductor Abstract: 22.1 Introduction 22.2 Theories of ferromagnetism in group IV dilute magnetic semiconductor (DMS) 22.3 Growth and characterizations of group IV dilute magnetic semiconductor (DMS) and nanostructures 22.4 Electric field-controlled ferromagnetism 22.5 Conclusion and future trends Index

About the Author

Yasuhiro Shiraki is X at Tokyo City University, Japan. Noritaka Usami is an Associate Professor at the Institute for Materials Research, Tohoku University, Japan.


This book represents a considerable collaborative state of the art review of SiGe current developments and nanostructures in electronic devices., Materials World

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