Table of Contents

Preface; 1. Introduction; 2. Multigate and nanowire transistors; 3. Synthesis and fabrication of semiconductor nanowires; 4. Quantum mechanics in one-dimension; 5. Nanowire electronic structure; 6. Charge transport in quasi-1D nanostructures; 7. Nanowire transistor circuits; Index.

Promotional Information

A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.

About the Author

Jean-Pierre Colinge is a Director at the Taiwan Semiconductor Manufacturing Company (TSMC). He is a Fellow of the IEEE and the TSMC and received the IEEE Andrew Grove Award in 2012. He has over 35 years' experience in conducting research on semiconductor devices and has authored several books on the topic. James C. Greer is a Professor and Head of the Graduate Studies Centre at the Tyndall National Institute, and co-founder and Director of EOLAS Designs Ltd, having formerly worked at Mostek, Texas Instruments, and Hitachi Central Research. He received the inaugural Intel Outstanding Researcher Award for Simulation and Metrology in 2012.

Reviews

'This is a very interesting and advanced book that gives a deep introduction to and explanation of the physics behind nanowire transistors … It is well written, organized, and self-explanatory, and can be used as a reference by those who wish to enter into the field of nanowire and nanostructure-based electronics. The book has many up-to-date references and clear and precise text with plenty of figures and diagrams, and therefore is a fundamental resource. … This is a well-organized book wherein the preceding chapters are used as the basis for understanding the following ones. … [It] is suitable for graduate researchers in materials science and semiconductor devices as well as engineers who want deeper insight into the explanation of nanowire-based devices.' Joana Vaz Pinto, MRS Bulletin