Table of Contents

1 Introduction.- 1.1 The Silicon MOSFET.- 1.2 Surface States and the Early Discoveries.- 1.3 New Technologies.- 1.4 Silicon Dioxide Growth.- 1.5 Microstructure of the Interface.- References.- 2 Morphological Aspects of Silicon Oxidation in Aqueous Solutions.- 2.1 Introduction.- 2.2 Reaction Anisotropy and the Control of Atomic-Scale Morphology.- 2.3 Extreme Anisotropy: NH4F Etching of Si(111).- 2.4 Controlling Anisotropy: The Curious Effects of Isopropanol.- 2.5 Correlated Reactions and the Development of Mesoscale Morphologies.- 2.6 Correlated Etching: The Surprising Role of Etch Pits.- 2.7 Kinetic Structures and the Development of Etch Hillocks.- 2.8 Using Micromachined Patterns to Study Surface Chemistry.- 2.9 Conclusions and Outlook.- References.- 3 Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation.- 3.1 Introduction.- 3.2 Passive and Active Oxidation in situ in the TEM.- 3.3 Passive Oxidation as a Layer-by-Layer Process.- 3.4 Active Oxidation as a Step-Flow Process.- 3.5 Control of Surface Morphology During Device Processing.- 3.6 Electron Beam Effects During in situ Electron Microscopy.- 3.7 Conclusions.- References.- 4 Oxidation of H-Terminated Silicon.- 4.1 Introduction.- 4.2 Experimental and Analytical Details.- 4.3 Initial Stage of Oxidation of H-Terminated Si Surfaces.- 4.4 Layer-by-Layer Oxidation Reaction at the Interface.- 4.5 Oxidation-Induced Roughness of Oxide Surfaces.- 4.6 Valence Band Discontinuities at and near the Si02/Si Interface.- 4.7 Summary and Future Directions.- References.- 5 Layer-by-Layer Oxidation of Si(001) Surfaces.- 5.1 Introduction.- 5.2 Experimental Details.- 5.3 SREM Observation of the Initial Oxidation of Si(001)-2 x 1 Surfaces.- 5.4 Mechanism of Layer-by-Layer Oxidation.- 5.5 Kinetics of Initial Layer-by-Layer Oxidation.- 5.6 Furnace Oxidation at High Temperature.- 5.7 Summary.- References.- 6 Atomic Dynamics During Silicon Oxidation.- 6.1 Introduction.- 6.2 Theoretical Approach.- 6.3 Atomic Processes During Oxidation.- 6.4 Model Structure of Si(001)-SiO2 Interface.- 6.5 Model of Oxidation.- 6.6 Discussion and Conclusion.- References.- 7 First-Principles Quantum Chemical Investigations of Silicon Oxidation.- 7.1 Introduction.- 7.2 Theoretical Approach.- 7.3 Water-Induced Oxidation of Si(100)-(2 x 1).- 7.4 Conclusions.- References.- 8 Vibrational Studies of Ultra-Thin Oxides and Initial Silicon Oxidation.- 8.1 Introduction.- 8.2 Scientific Challenges.- 8.3 Nature of Ultra-Thin Silicon Oxides and Si/SiO2 Interface.- 8.4 Water Oxidation of Si(100)-(2 x 1).- 8.5 Conclusions.- References.- 9 Ion Beam Studies of Silicon Oxidation and Oxynitridation.- 9.1 Introduction.- 9.2 Experimental Techniques.- 9.3 Silicon Oxidation.- 9.4 Silicon Oxynitridation.- 9.5 Hydrogen in Ultrathin SiO2 Films.- References.- 10 Local and Global Bonding at the Si-SiO2 Interface.- 10.1 Introduction.- 10.2 The Oxidation Process and Local Bonding Arrangements.- 10.3 Global Bonding at the Interface.- 10.4 Z-Contrast Microscopy.- 10.5 Electron Energy Loss Spectroscopy.- References.- 11 Evolution of the Interfacial Electronic Structure During Thermal Oxidation.- 11.1 Introduction.- 11.2 Image Formation in STEM.- 11.3 Measuring Interface Roughness and Oxide Thickness.- 11.4 Mapping Interface States with EELS.- 11.5 Comparing Electronic Structure Calculations and EELS.- 11.6 Evolution of the Local Electronic Structure.- 11.7 Conclusions.- References.- 12 Structure and Energetics of the Interface Between Si and Amorphous SiO2.- 12.1 Introduction.- 12.2 Method.- 12.3 Calculation and Results.- 12.4Discussion.- 12.5 Conclusion.- References.

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From the reviews: "Silicon remains the dominant microelectronic material ! . One of the reasons for this is the 'extraordinary perfection' of its interface with its thermally grown oxide. ! The book provides a valuable snapshot as at early 2000 of the range of diverse approaches, both theoretical and experimental, being applied ! by some of the leading practitioners in this field. It would be of interest to scientists and engineers with a specialist's interest in this or related interfaces." (M. A. Green, The Physicist, Vol. 38 (6), 2001)