Physical constants and unit conversions; List of symbols; Preface to the second edition; Preface to the first edition; 1. Introduction; 2. Basic device physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performance factors; 6. Bipolar devices; 7. Bipolar device design; 8. Bipolar performance factors; 9. Memory devices; 10. Silicon-on-insulator devices; Appendices: 1. CMOS process flow; 2. Outline of a process for fabricating modern n-p-n bipolar transistors; 3. Einstein relations; 4. Spatial variation of quasi-Fermi potentials; 5. Generation and recombination processes and space-charge-region current; 6. Diffusion capacitance of a p-n diode; 7. Image-force-induced barrier lowering; 8. Electron-initiated and hole-initiated avalanche breakdown; 9. An analytical solution for the short-channel effect in subthreshold; 10. Generalized MOSFET scale length model; 11. Drain current model of a ballistic MOSFET; 12. Quantum-mechanical solution in weak inversion; 13. Power gain of a two-port network; 14. Unity-gain frequencies of a MOSFET transistor; 15. Determination of emitter and base series resistances; 16. Intrinsic-base resistance; 17. Energy-band diagram of a Si-SiGe n-p diode; 18. fr and fmax of a bipolar transistor; References; Index.
An updated edition of a classic, invaluable for both practical transistor design and teaching.
Yuan Taur is a Professor of Electrical and Computer Engineering at the University of California, San Diego. He spent twenty years at IBM's T. J. Watson Research Center where he won numerous invention and achievement awards. He is an IEEE Fellow, Editor-in-Chief of IEEE Electron Device Letters, and holds thirteen US patents. Tak H. Ning is an IBM Fellow at the T. J. Watson Research Center, New York, where he has worked for over 35 years. A Fellow of the IEEE and the American Physical Society and a member of the US National Academy of Engineering, he has authored more than 120 technical papers and holds 36 US patents. He has won several awards, including the ECS 2007 Gordon E. Moore Medal, the IEEE 1991 Jack A. Morton Award and the 1998 Pan Wen-Yuan Foundation Outstanding Research Award.
'For the past several years, I've taught from Taur and Ning's book
because it's best at connecting advanced device physics to real
world device, circuit, and system technology. The second edition
updates each chapter, adds new chapters on memory and SOI, doubles
the number of appendices, and contains all new homework problems.
The best book of its kind is now even better.' Mark Lundstrom,
Purdue University
'I have taught a few VLSI device courses with the first edition as
a textbook. Those were enjoyable experiences and the book was well
received by students. Now the second edition comes with timely
updates and two new chapters, which continue the tradition of
emphasizing the design aspects of modern VLSI devices. I strongly
recommend this book as a text or a reference in semiconductor
device courses.' Byung-Gook Park, Seoul National University
'Fundamentals of Modern VLSI Devices, by Taur and Ning, has been an
important reference text for our graduate semiconductor device
physics course at the University of California, Berkeley for
several years. It provides a well-written review of the operation
of MOSFETs and BJTs. The new edition expands on this by introducing
major new topics related to memories, silicon on insulator devices,
and scale length and high field modeling as applied to MOSFETs. By
including this material, this text is now positioned to be the
primary text for typical graduate device physics courses, and will
meet the needs of both students and instructors through its
combination of detailed, well-written, and easy to follow
descriptions of device operation, coupled with exercises and
assignments for testing understanding of the relevant course
material.' Vivek Subramanian, University of California,
Berkeley
'This second edition of Fundamentals of Modern VLSI Devices builds
on the tremendous success enjoyed by the original book. It provides
well-organized and in-depth discussions on all relevant aspects of
modern MOSFET and BJT devices, with an excellent balance of physics
and mathematics. Every chapter is revised to reflect advances in
VLSI devices in the last 10 years since the publication of the
original book. Two new chapters on memory and silicon-on-insulator
devices have been included along with nine additional appendixes.
The problems at the end of each chapter are carefully designed and
serve to help the readers better understand the key concepts.' Wei
Lu, University of Michigan
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