Historical Perspective (H. Hughes).
Electron-Hole Generation, Transport, and Trapping in SiO2
(F.McLean, et al.).
Radiation-Induced Interface Traps (P. Winokur).
Radiation Effects on MOS Devices and Circuits
(P.Dressendorfer).
Radiation-Hardening Technology (P. Dressendorfer).
Process-Induced Radiation Effects (T. Ma).
Source Considerations and Testing Techniques (K. Kerris).
Transient-Ionization and Single-Event Phenomena (S. Kerns).
Index.
T. P. Ma and Paul V. Dressendorfer are the authors of Ionizing Radiation Effects in MOS Devices and Circuits, published by Wiley.
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